Ordering number : ENN6863 MCH3310 P-Channel Silicon MOSFET MCH3310 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2167 [MCH3310] 0.
25 0.
3 0.
15 Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
3 1.
6 2.
1 1 0.
65 2.
0 2 0.
25 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.
15 Specifications 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Ratings -30 ± 20 --1.
5 --6.
0 0.
9 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceram...

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