MITSUBISHI LSIs M6MGB/T166S4BWG 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.
3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package) DESCRIPTION The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP.
16M-bits Flash memory is a 1,048,576 words, 3.
3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.
4M-bits SRAM is a 262,144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T166S4BWG is suitable for the ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)