MJ14001 (
PNP), MJ14002* (
NPN), MJ14003* (
PNP)
*Preferred Devices
High−Current Complementary Silicon Power
Transistors
Designed for use in high−power amplifier and switching circuit applications.
Features
• High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.
5 Vdc (Max)
@ IC = 50 Adc
• Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJ14001 VCEO MJ14002/03
60
Vdc
80
Collector−Base Voltage
MJ14001 VCBO MJ14002/03
60
Vdc
80
Emitter−Base Voltage Collector Current − Continuous Base Current − ...