MJH6284 (
NPN), MJH6287 (
PNP)
Darlington Complementary Silicon Power
Transistors
These devices are designed for general−purpose amplifier and low−speed switching motor control applications.
Features
• Similar to the Popular
NPN 2N6284 and the
PNP 2N6287 • Rugged RBSOA Characteristics • Monolithic Construction with Built−in Collector−Emitter Diode • These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
− Peak
Symbol VCEO VCB VEB IC
Max 100 100 5.
0 20 40
Unit Vdc Vdc Vdc Adc
Base Current
IB
Total Device Dissipation @ TC = 25_C
PD
Derate above 25_C
0.
5
Adc
160
W
1.
28
W/_C
Operatin...