ON Semiconductort
NPN Silicon Power
Transistors
SWITCHMODEt Bridge Series
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specifically designed for use in half bridge and full bridge off
line converters.
• Excellent Dynamic Saturation Characteristics
• Rugged RBSOA Capability
• Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V • Collector–Emitter Breakdown — V(BR)CES — 650 V • State–of–Art Bipolar Power
Transistor Design
• Fast Inductive Switching:
tfi = 25 ns (Typ) @ 100_C tc = 50 ns (Typ) @ 100_C tsv = 1 µs (Typ) @ 100_C
• Ultrafast FBSOA Specified
• 100_C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
Leakages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
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