PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.
To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure.
PACKAGE DIMENSIONS (UNIT: mm) 17.
5 ±0.
5 14.
3 1.
0 ±0.
1 GATE SOURCE FEATURES • Class A operation • High output power: 39.
5 dBm (typ) • High gain: 10.
5 dB (typ) • High power added efficiency: 40 % (typ) • Hermetically sealed ceramic package 2.
26 ±0.
4 0.
2 MAX.
1.
0 0.
1–0.
02 +0.
06 2.
5 R1.
25, 2 PLACES DRAIN 8.
9 ±0.
4 6.
35 ±0.
4 4.
0 MIN BOTH LEADS 3.
8 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) D...

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