Part Number
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NE651R479A |
Manufacturer
|
NEC |
Description
|
0.4 W L-BAND POWER GaAs HJ-FET |
Published
|
May 7, 2005 |
Detailed Description
|
DATA SHEET
N-CHANNEL GaAs HJ-FET
NE651R479A
0.4 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE651R479A is a 0.4 W GaAs...
|
Datasheet
|
NE651R479A
|
Overview
DATA SHEET
N-CHANNEL GaAs HJ-FET
NE651R479A
0.
4 W L-BAND POWER GaAs HJ-FET
DESCRIPTION
The NE651R479A is a 0.
4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems.
It is capable of delivering 0.
4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• GaAs HJ-FET structure • High output power : Pout = +27.
0 dBm TYP.
@ VDS = 3.
5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.
0 dBm TYP.
@ VDS = 3.
5 V, IDset = 50 mA...
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