PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL
TRANSISTOR
FEATURES
• OUTPUT POWER AT 1dB COMPRESSION POINT: 24.
5 dBm TYP @F = 1.
9 GHZ, VCE = 3.
6 V, Class AB, Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE68939
NE68939
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
+0.
2 2.
8 -0.
3 +0.
2 1.
5 -0.
1 +0.
10 0.
4 -0.
05 (LEADS 2, 3, 4)
2.
9 ± 0.
2
0.
95 0.
85
2
3 1.
9
1
4
DESCRIPTION
The NE68939 is a low voltage,
NPN Silicon Bipolar
Transistor for pulsed power applications.
The device is designed to operate from a 3.
6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.
0 GHZ with a 1:8 duty cycle.
These characteristics make it an ideal device for TX driver stage in a 1.
9 GHZ digita...