Part Number
|
NE722S01 |
Manufacturer
|
NEC |
Title
|
NECs C TO X BAND N-CHANNEL GaAs MES FET |
Description
|
NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications thr...
|
Features
|
• HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz • LOW NOISE...
|
Published
|
May 7, 2005 |
Datasheet
|
NE722S01 PDF File
|
Features
• HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz
• OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz
• LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
• GATE LENGTH: LG = 0.8 µm (recessed gate)
• GATE WIDTH: WG = 400 µm
2
O...
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