Part Number
|
NE76000L |
Manufacturer
|
NEC |
Description
|
LOW NOISE L TO Ku BAND GaAs MESFET |
Published
|
May 7, 2005 |
Detailed Description
|
LOW NOISE L TO Ku BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz
Noise Figure, NF (dB)
4 3.5...
|
Datasheet
|
NE76000L
|
Overview
LOW NOISE L TO Ku BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE NF = 1.
6 dB TYP at f = 12 GHz
Noise Figure, NF (dB)
4 3.
5 Ga 3 2.
5 2 1.
5 1 NF 0.
5 0 1
NE76000
NOISE FIGURE & ASSOCIATED GAIN vs.
FREQUENCY VDS = 3 V, IDS = 10 mA
24 21 18 15 12 9 6 3 0 10 20
• LG = 0.
3 µm, WG = 280 µm • ION IMPLANTATION
DESCRIPTION
The NE76000 provides a low noise figure and high associated gain through K-Band.
The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.
These devices feature a recessed 0.
3 micron gate and triple epitaxial technology.
The surface of the device, except for bonding pads, is passivated with SiO2 and Si3N4 for scratch prote...
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