NEC's
NPN SILICON HIGH FREQUENCY
TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
• LOW NOISE FIGURE: 1.
1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST
00 (CHIP)
VCC = 10 V, IC 7 mA MSG
4.
0 3.
5 3.
0 2.
5 NFMIN 2.
0 1.
5 1.
0 0.
4 0.
5 1.
0 2 3 4 5 GA MAG
20
Noise Figure, NF (dB)
15
Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB)
rs e b m : u DESCRIPTION E n ot T t n O r .
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NEC's NE856 series of
NPN epitaxial silicon
transistors is d...