Part Number
|
NE960R2 |
Manufacturer
|
NEC |
Description
|
0.2 W X / Ku-BAND POWER GaAs MES FET |
Published
|
May 7, 2005 |
Detailed Description
|
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE96...
|
Datasheet
|
NE960R2
|
Overview
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.
2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.
2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems.
It is capable of delivering 0.
2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc.
The NE961R200 and the NE960R200 are available in chip form.
The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance.
The NE960R275 is available in a hermetically sealed ceramic package.
Reliability and ...
Similar Datasheet