DATA SHEET
SILICON POWER
TRANSISTOR
NEL2004F02-24
NPN SILICON EPITAXIAL
TRANSISTOR L Band Power Amplifier
DESCRIPTION AND APPLICATIONS
NEL2004F02-24 of
NPN epitaxial microwave power
transistors is designed for 1.
8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.
OUTLINE DIMENSIONS (Unit: mm)
2 2 ±0.
2 3 ±0.
2 2 ±0.
2 2 × φ 3.
2 ±0.
3 1 1
5.
85 ±0.
2 2.
58 ±0.
3
FEATURES
• High Linear Power and Gain
4.
2 ±0.
4 0.
1 +0.
05 –0.
02
1 1 3 3.
6 ±0.
5 3.
6 ±0.
5 12.
4 ±0.
2 9.
2 ±0.
2 4.
6 ±0.
2
• Low Internal Modulation Distortion • High Reliability Gold Metallization • Emitter Ballasting • 24 V Operation
1 - EMITT...