MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBF5457LT1/D
JFET Ċ General Purpose
Transistor
N–Channel
2 SOURCE 3 GATE
MMBF5457LT1
3
1 DRAIN
1 2
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage Reverse Gate–Source Voltage Gate Current Symbol VDS VDG VGS(r) IG Value 25 25 25 10 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C
DEVICE MARKING
MMBF5457LT1 = 6D
ELECTRICAL CHARACTERISTICS (...