MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR521LT1/D
The RF Line
PNP Silicon High-Frequency
Transistor
Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.
5 GHz.
Also usable in applications requiring fast switching times.
• High Current Gain–Bandwidth Product — fT = 3.
4 GHz (Typ) @ IC = – 35 mAdc (MMBR521LT1) fT = 4.
2 GHz (Typ) @ IC = – 50 mAdc (MRF5211LT1) • Low Noise Figure @ f = 1.
0 GHz — NF(matched) = 2.
5 dB (Typ) (MMBR521LT1) NF(matched) = 2.
8 dB (Typ) (MRF5211LT1) • High Power Gain — Gpe (matched) = 11 dB (Typ) • Guaranteed RF Parameters • Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1) Offer Improved ...