LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
NPN Silicon
3 COLLECTOR
1 BASE
MAXIMUM RATINGS
2 EMITTER
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS
V CEO V CBO V EBO
IC
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING
2222 30 60 5.
0 600
2222A 40 75 6.
0 600
Unit Vdc Vdc Vdc mAdc
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit 225 mW
1.
8 mW/°C 5...