MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT2369LT1/D
Switching
Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT2369LT1 MMBT2369ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.
5 200
2 EMITTER Unit Vdc Vdc Vdc Vdc mAdc
1 2
3
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate a...