PN918 / MMBT918
Discrete POWER & Signal Technologies
PN918
MMBT918
C
E C B
TO-92
E
SOT-23
Mark: 3B
B
NPN RF
Transistor
This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.
0 mA to 30 mA range.
Sourced from Process 43.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15 30 3.
0 50 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impair...