Part Number
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MMDF2N06VL |
Manufacturer
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Motorola |
Description
|
Dual MOSFET |
Published
|
May 9, 2005 |
Detailed Description
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS V™ SO-8 for Surface M...
|
Datasheet
|
MMDF2N06VL
|
Overview
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMDF2N06VL/D
Product Preview
TMOS V™ SO-8 for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.
This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.
Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed ...
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