MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Medium Power Field Effect
Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt
SOT–223 for Surface Mount
This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes.
This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts.
This new energy efficient device also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and ...