NTD23N03R Power MOSFET 23 Amps, 25 Volts, N−Channel DPAK Features • • • • • • Pb−Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters http://onsemi.
com V(BR)DSS 25 V RDS(on) TYP 32 mW N−CHANNEL D ID MAX 23 A MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance, Junction−to−Case Total Power Dissipation @ T C = 25°C Drain Current − Continuous @ TC = 25°C, Chip − Continuous @ TC = 25°C, Limited by Package −...

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