NTE317 Silicon
NPN Transistor RF Power Output
Description: The NTE317 is a 12.
5V epitaxial silicon
NPN planar
transistor designed primarily for HF communications.
This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.
Features: D 70W Minimum with Greater than 13.
5dB Gain D Withstands Severe Mismatch under Operating Conditions D Emitter Ballasted D Low Inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO .
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36V Collector–Emitter Voltage, VCEO .
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