NTE318 Silicon
NPN Transistor RF Power Output
Description: The NTE318 is a 12.
5V epitaxial silicon
NPN planar
transistor designed primarily for HF communications.
This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.
Features: D Designed for HF military and commercial equipment 40W minimum with greater than 10.
0dB gain D Withstands severe mismatch under operating conditions D Low inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
36V Collector–Emitter Voltage, VCEO .
.
.
.
.
.
.
.
.
.
.
...