NTE384 Silicon
NPN Transistor High Voltage Power Amp/Switch
Description: The NTE384 is a multiple epitaxial silicon
NPN power
transistor in a TO66 type package utilizing a multiple–emitter site structure.
Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds.
Multiple–emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe–operation–area.
The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line.
The leakage current is specified at 450V; therefore the device can also be used in a series bridge configuration on a 220V line.
Th...