DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF170 N-channel enhancement mode vertical D-MOS
transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS
transistor
DESCRIPTION N-channel enhancement mode vertical D-MOS
transistor in a SOT23 envelope.
Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers.
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) ...