DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMMT591A
PNP BISS
transistor
Product specification Supersedes data of 1999 May 21 1999 Aug 04
Philips Semiconductors
Product specification
PNP BISS
transistor
FEATURES • High current (max.
1 A) • Low collector-emitter saturation voltage ensures reduced power consumption.
APPLICATIONS • Battery powered units where high current and low power consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal)
transistor in a SOT23 plastic package.
NPN complement: PMMT491A.
MARKING TYPE NUMBER PMMT591A Note 1.
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
MARKING CODE(1) 9B∗
Top view
handbook, halfpage
PMMT591A
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