DISCRETE SEMICONDUCTORS
DATA SHEET
PPC5001T
NPN microwave power
transistor
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance
handbook, halfpage
PPC5001T
PINNING - SOT447A PIN 1 2 3 base emitter collector DESCRIPTION
3
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