NTE6090 Silicon Dual Power Rectifier
Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the
Schottky Barrier principle with a platinum barrier metal.
Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings: Peak Repetitive Reverse Voltage, VRRM .
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45V Working Peak Reverse Voltage, VRWM .
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