NTE65101 Integrated Circuit 256 x 4–Bit Static Random Access Memory (SRAM) Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package.
This device offers ultra low power and fully static operation with a single 5V supply.
Separate data inputs and data outputs permit maximum flexibility in bus–oriented systems.
Data retention at a power supply as low as 2V over temperature readily allows design into applications using battery backup for nonvolatility.
The NTE65101 is fully static and does not require clocking in standby mode.
Features: D Organized as 256 Bytes of 4–Bits D Static Operation D Low Standby Power D Three–State Output D Single...

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