DISCRETE SEMICONDUCTORS
DATA SHEET
MZ0912B50Y
NPN microwave power
transistor
Product specification Supersedes data of November 1994 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input and output matching cell allows an easier design of circuits.
APPLICATIONS Common base, class C, broadband, pulse power amplifi...