March 1996
NDC651N N-Channel Logic Level Enhancement Mode Field Effect
Transistor
General Description
These N-Channel logic level enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
3.
2A, 30V.
RDS(ON) = 0.
09Ω @ VGS = 4.
5V RDS(ON) = 0.
06Ω @ VGS = 10V.
Proprietary SuperSOTTM-...