December 1996
NDH8301N Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
3 A, 20 V.
RDS(ON) = 0.
06 Ω @ VGS = 4.
5 V RDS(ON) = 0.
075 Ω @ VGS = 2.
7 V.
Proprietary SuperSOTTM-8 packag...