July 1996
NDH831N N-Channel Enhancement Mode Field Effect
Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.
Features
5.
8A, 20V.
RDS(ON) = 0.
03Ω @ VGS = 4.
5V RDS(ON) = 0.
04Ω @ VGS = 2.
7V.
High density cell design for extr...