June 1997
NDS8961 Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
3.
1 A, 30 V.
RDS(ON) = 0.
1 Ω @ VGS = 10 V RDS(ON) = 0.
15 Ω @ VGS = 4.
5 V.
High density cell design for extremely low RDS(ON...