PRELIMINARY DATA SHEET
Hetero Junction Field Effect
transistor
NE38018
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain NF = 0.
55 dB typ.
Ga = 14.
5 dB typ.
OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ.
at f = 2 GHz NF = 0.
4 dB typ.
Ga = 20 dB typ.
at f = 900 MHz 4 pins super mini mold package Wg = 800 µm
ORDERING INFORMATION (PLAN)
Part Number NE38018-T1 Quantity 3 kpcs/Reel.
Packing Style Embossed tape 8 mm wide.
Pin3 (Source), Pin4 (Drain) face to perforation side of the tape.
NE38018-T2 3 kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Source), Pin2 (Gate) face to perforation side of the tape.
Remark Please contact with responsible NEC ...