PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT
TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
FEATURES
• • • Super Low Noise Figure & High Associated Gain NF = 0.
8 dB TYP.
, Ga = 11 dB TYP.
at f = 12 GHz 6pin super minimold package Gate Width: Wg = 200µm
ORDERING INFORMATION
Part Number NE4210M01-T1 Package 6-pin super minimold Supplying Form Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape V73 Marki...