DATA SHEET
HETERO JUNCTION FIELD EFFECT
TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.
5 dB TYP.
Ga = 13.
0 dB TYP.
@f = 12 GHz • Gate Length: Lg ≤ 0.
20 µm • Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number NE4210S01-T1 NE4210S01-T1B Marking L Supplying Form Tape & reel 1 kp/reel Tape & reel 4 kp/reel
Remark To order evaluation samples, please contact your local...