DATA SHEET
HETERO JUNCTION FIELD EFFECT
TRANSISTOR
NE434S01
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.
1 2.
0 ± 0.
2
2.
PACKAGE DIMENSIONS (Unit: mm)
0
±
FEATURES
• • Super Low Noise Figure & High Associated Gain NF = 0.
35 dB TYP.
, Ga = 15.
5 dB TYP.
at f = 4 GHz Gate Width: Wg = 280 Pm
0.
2
ORDERING INFORMATION
PART NUMBER NE434S01-T1 NE434S01-T1B SUPPLYING FORM Tape & reel 1000 pcs.
/reel Tape & reel 4000 pcs.
/reel MARKING E
4
3 0.
65 TYP.
1.
9 ± 0.
2 1.
6
...