PRELIMINARY DATA SHEET
GaAs HETEROJUNCTION BIPOLAR
TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER
NPN GaAs HBT
FEATURES
• For Low Noise & High Gain amplifiers NF = 1.
0 dB TYP.
Ga = 15.
0 dB TYP.
MSG = 15.
0 dB TYP.
(@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP.
(@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) • 4-pin super minimold package • Grounded Emitter
Transistor
ORDERING INFORMATION (PLAN)
Part Number NE52118-T1 Package 4-pin super minimold Marking V41 Supplying Form Embossed tape 8 mm wide.
Pin 3, pin 4 face to perforation side of the tape.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for s...