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Part Number
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NE5520279A-T1 |
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Manufacturer
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NEC |
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Description
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NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
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Published
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May 12, 2005 |
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Detailed Description
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NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE: ...
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Datasheet
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NE5520279A-T1
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Overview
NEC'S 3.
2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.
7x5.
7x1.
1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP
5.
7 MAX.
0.
6±0.
15
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)
4.
2 MAX.
Source 1.
5±0.
2 Source
0X001
4.
4 MAX.
• HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.
8 GHz • SINGLE SUPPLY: 2.
8 to 6.
0 V
A
0.
4±0.
15 5.
7 MAX.
0.
2±0.
1
0.
8±0.
15
1.
0 MAX.
• HIGH LINEAR GAIN: 10 dB TYP @ 1.
8 GHz
2
Gate
Drain
Gate
Drain
0.
8 MAX.
3.
6±0.
2
DESCRIPTION
NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications.
Die a...
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