NTB65N02R, NTP65N02R Product Preview Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK http://onsemi.
com Features • • • • • Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Fast Switching 65 A, 24 V RDS(on) = 8.
3 mW (TYP) D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain–to–Source Voltage Gate–to–Source Voltage Continuous Symbol VDSS VGS ID IDM PD TJ and Tstg EAS Value 24 ±20 65 160 78 –55 to 150 TBD Unit Vdc Vdc A A W °C 4 mJ TO–220AB CASE 221A Style 5 xxxxx YWW S G Drain Current (Continuous @ TA = 25°C (Note 3) Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25°C Oper...

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