Part Number
|
OH10010 |
Manufacturer
|
Panasonic Semiconductor |
Description
|
GaAs Hall Device |
Published
|
May 13, 2005 |
Detailed Description
|
GaAs Hall Devices
OH10010
GaAs Hall Device
Magnetic sensor I Features
• Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)...
|
Datasheet
|
OH10010
|
Overview
GaAs Hall Devices
OH10010
GaAs Hall Device
Magnetic sensor I Features
• Hall voltage: typ.
105 mV (VC = 6 V, B = 0.
1 T) • Input resistance: typ.
0.
75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.
06%/°C • Mini type (4-pin) package with positioning projection.
Allowing automatic insertion through the magazine package.
0.
65 ± 0.
15 4
Unit : mm
2.
8 − 0.
3
+ 0.
2
1.
5 ± 0.
2 1 0.
5 R
0.
65 ± 0.
15
0.
4 −0.
05 (0.
5 R) 0.
16 − 0.
06
+0.
1
0.
95 0.
95
2.
9 ± 0.
2 1.
9 ± 0.
2
3
2
0.
5 ± 0.
1 1.
1 − 0.
1
+ 0.
2
0.
8
0 to 0.
1 0.
4 ± 0.
2 0.
4 ± 0.
2 φ 1.
0 ± 0.
025
I Applications
• Various hall motor (VCR, phonograph, V...
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