GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 487 P Area not flat 0.7 0.8 0.4 0.4 0.6 0.4 3.1 2.5 2.0 1.7 4.0 3.6 2.54 mm spacing ø3.1 ø2.9 1.8 1.2 29 27 4.5 4.0 Cathode 3.5 Chip position 0.6 0.4 Approx. weight 0.3 g Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkma...
Siemens Semiconductor Group