Advanced Power MOSFET
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 Ω (Typ.) 1 SFR/U9220 BVDSS = -200 V RDS(on) = 1.5 Ω ID = -3.1 A D-PAK 2 1 3 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolu...
Fairchild Semiconductor