Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! 175 C Operating Temperature ! Lower Leakage Current : 10 µA (Max.
) @ VDS = -60V ! Low RDS(ON) : 0.
106 Ω (Typ.
) 1 SFW/I9Z34 BVDSS = -60 V RDS(on) = 0.
14 Ω ID = -18 A D2-PAK 2 o I2-PAK 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Pe...

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