Part Number
|
SI2335DS |
Manufacturer
|
Vishay Siliconix |
Description
|
P-Channel 12-V (D-S) MOSFET |
Published
|
May 23, 2005 |
Detailed Description
|
Si2335DS
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–12
rDS(on) (W)
0.051 @ VGS...
|
Datasheet
|
SI2335DS
|
Overview
Si2335DS
New Product
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–12
rDS(on) (W)
0.
051 @ VGS = –4.
5 V 0.
070 @ VGS = –2.
5 V 0.
106 @ VGS = –1.
8 V
ID (A)
–4.
0 –3.
5 –3.
0
TO-236 (SOT-23)
G 1 3 S 2 D
Top View Si2335DS (E5)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS
5 sec
–12 $8 –4.
0 –3.
3 –15
Steady State
Unit
V
–3.
2 –2.
6 A
–1.
6...
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