28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM FEATURES • 2.
7V to 3.
6V Supply • Read Access Time—300 ns • CMOS Technology for Low Power Dissipation - 8 mA Active - 50 µA CMOS Standby Current • Byte Write Time—3 ms • Data Retention 200 years • High Endurance - Minimum 100,000 Erase/Write Cycles • Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and Data Latches • Data Polling • Ready/Busy • Chip Clear Operation • Enhanced Data Protection - VCC Detector - Pulse Filter - Write Inhibit • Electronic Signature for Device Identification • Organized 8Kx8 JEDEC Standard Pinout - 28-pin Dual-In-Line Package - 32-pin Chip Carrier (Leadless or Plasti...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)