2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1998, Power Innovations Limited, UK AUGUST 1998 TELECOMMUNICATION SYSTEM PRIMARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V(BR) DEVICE MINIMUM V 2EL2 2EL3 2EL4 ±245 V(BO) MINIMUM V ±265 ±200 ±215 V(BO) MAXIMUM V ±400 ±265 ±265 CELL PACKAGE (SIDE VIEW) T(A) R(B) MD4XANA q Rated for International Surge Wave Shapes ITU-T K28 DEVICE (10/700) ITSP A 2EL2 2EL3 2EL4 ±125 ±125 ±125 GR-974-CORE (10/1000) ITSP A ±100 ±100 ±100 device symbol T SD4XAA R Terminals T and R correspond to the alternative line designators of A and B q q Gas Discharge Tube (GD...

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