Part Number
|
BBY51 |
Manufacturer
|
Siemens Group |
Description
|
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Published
|
Jun 3, 2005 |
Detailed Description
|
BBY 51 Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VC...
|
Datasheet
|
BBY51
|
Overview
BBY 51 Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment
Type BBY 51
Marking Ordering Code S3 Q62702-B631
Pin Configuration 1=A 2=A
Package 3 = C1/C2 SOT-23
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 .
.
.
+ 150 - 55 .
.
.
+ 150 Unit V mA °C
VR IF Top Tstg
Semiconductor Group
1
Jan-09-1997
BBY 51
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC characteristics Reverse current Values typ.
max.
Unit
IR
10 200
nA
VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 ...
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