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SPB02N60S5

Part Number SPB02N60S5
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Jun 7, 2005
Detailed Description Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Datasheet SPB02N60S5




Overview
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPB02N60S5 VDS RDS(on) ID 600 V 3 Ω 1.
8 A PG-TO263 Type SPB02N60S5 Package PG-TO263 Ordering Code Q67040-S4212 Marking 02N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 1.
35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 1.
8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate...






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